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NGTB75N60SWG

Part No NGTB75N60SWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 75A 600V TO-247 / IGBT 600 V 100 A 595 W Through Hole TO-247-3
Datasheet
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max 595 W
Switching Energy 1.5mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 310 nC
Td (on/off) @ 25°C 110ns/270ns
Test Condition 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNGTB75N60SWG,2156-NGTB75N60SWG-ON,NGTB75N60SWGOS
Standard Package 30
Win Source Part Number 1082083-NGTB75N60SWG
Ultra Librarian 3D Model Ultra Librarian NGTB75N60SWG CAD Model

Description

ON Semiconductor NGTB75N60SWG IGBT - Optimal Performance for Power Applications

The ON Semiconductor NGTB75N60SWG is a high-performance insulated gate bipolar transistor (IGBT) designed to deliver exceptional efficiency and power handling for a wide range of applications. This IGBT utilizes ON Semiconductor's advanced technology to provide a perfect blend of low conduction and switching losses, making it an ideal choice for high-efficiency power conversion in both consumer and industrial electronics.

Key Features:

  • Current Handling: The NGTB75N60SWG is capable of conducting up to 75A, making it suitable for high-power applications.
  • Voltage Rating: With a collector-emitter voltage rating of 600V, this IGBT can handle significant voltage without compromise.
  • Low Saturation Voltage: The device features a low on-state voltage, reducing conduction losses and improving overall efficiency.
  • High-Speed Switching: Fast switching characteristics minimize switching losses and enable operation at higher frequencies.
  • Robustness: Built to withstand harsh conditions, the NGTB75N60SWG offers a rugged design that ensures reliability and longevity.
  • Co-Packaged Diode: Includes a free-wheeling diode, which enhances performance during switching and provides protection against reverse voltage spikes.

Applications:

The versatility of the NGTB75N60SWG IGBT allows it to be used in a variety of power applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Solar Inverters
  • Electric Vehicle (EV) Chargers

Technical Specifications:

Below are some of the technical specifications that highlight the capabilities of the NGTB75N60SWG:

  • Collector-Emitter Voltage (Vce): 600V
  • Continuous Collector Current (Ic): 75A
  • Gate-Emitter Threshold Voltage (Vge(th)): 5.0V
  • Maximum Operating Temperature: +150°C
  • Package / Case: TO-247

With its robust design and high-performance features, the ON Semiconductor NGTB75N60SWG IGBT is a superior choice for designers looking to enhance efficiency and reliability in their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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