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NGTB15N120IHWG

Part No NGTB15N120IHWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 15A 1200V TO-247 / Trans IGBT Chip N-CH 1200V 30A 278000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) @ Vge, Ic 2.45V @ 15V, 15A
Power - Max 278W
Switching Energy 360μJ (off)
Input Type Standard
Gate Charge 120nC
Td (on/off) @ 25°C -/130ns
Test Condition 600V, 15A, 10 Ohm, 15V
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 790685-NGTB15N120IHWG
Popularity Medium
Supply and Demand Status Limited
Family Name NGTB15N120IHW
ECCN EAR99
Country of Origin Vietnam
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NGTB15N120IHWG CAD Model

Description

ON Semiconductor NGTB15N120IHWG IGBT

The NGTB15N120IHWG is a high-performance insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is specifically engineered to provide a superior combination of high efficiency, fast switching, and robust thermal performance. It is ideal for a wide range of power applications, including inverters, converters, motor drives, and power management systems.

Featuring advanced trench gate field-stop technology, the NGTB15N120IHWG offers an optimal balance between conduction and switching losses, allowing for increased efficiency in high-frequency operations. The device boasts a collector-emitter voltage (VCE) rating of 1200V, which ensures reliable operation even under high voltage conditions. The IGBT is capable of handling continuous collector currents up to 30A, making it suitable for handling significant power levels.

The NGTB15N120IHWG comes in a TO-247 package, which provides excellent thermal performance and is widely used in power electronic circuits. The package's robust design ensures that the IGBT can withstand the mechanical stresses typically encountered in industrial environments. In addition, the device features a low on-state voltage drop (VCE(on)) and a low gate charge (QG), which minimizes power dissipation and enhances overall system efficiency.

ON Semiconductor has equipped the NGTB15N120IHWG with a co-packaged fast recovery diode, offering a freewheeling function that is crucial for inductive load applications. This integrated diode ensures fast recovery times and reduced electromagnetic interference (EMI), which is essential for maintaining the integrity of electronic systems.

The NGTB15N120IHWG is characterized by its high ruggedness and exceptional endurance, making it an excellent choice for applications that demand long-term reliability. With its impressive specifications and ON Semiconductor's commitment to quality, this IGBT stands out as a top-tier component for designers looking to enhance the performance and efficiency of their power conversion systems.

Overall, the NGTB15N120IHWG is a testament to ON Semiconductor's dedication to providing innovative power solutions that meet the evolving needs of modern electronic applications. Its combination of high voltage capability, efficient switching, and thermal resilience makes it an indispensable component for any power electronic design engineer's toolkit.

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