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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 390 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 50 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Power - Max 150 W
Input Type Logic
Td (on/off) @ 25°C -/5µs
Test Condition 300V, 9A, 1kOhm, 5V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number NGB820
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNGB8206NG,2156-NGB8206NG-ON
Standard Package 50
Win Source Part Number 1002409-NGB8206NG
Ultra Librarian 3D Model Ultra Librarian NGB8206NG CAD Model

Description

The NGB8206NG is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor. This IGBT is designed to meet the efficiency and reliability needs of modern electronic applications. Offering a robust and energy-efficient solution, the NGB8206NG is ideal for a wide range of power switching applications, including motor drives, inverters, and power supplies.

Key Features

  • High Current Capability: The NGB8206NG is capable of handling high continuous collector currents, making it suitable for high-power applications.
  • Low Saturation Voltage: Its low collector-emitter saturation voltage reduces on-state power losses and improves efficiency, which is critical for energy-saving designs.
  • High Input Impedance: The device features a high input impedance, which minimizes gate drive power requirements and simplifies gate drive circuitry.
  • Fast Switching Speed: With its fast switching capabilities, the NGB8206NG ensures reduced switching losses, which is beneficial for high-frequency operations.
  • Co-Packaged Free-Wheeling Diode: The inclusion of a co-packaged free-wheeling diode provides efficient anti-parallel diode functionality, necessary for inductive load applications.

Applications

The versatile nature of the NGB8206NG makes it suitable for a variety of applications that require high efficiency and reliability:

  • AC and DC Motor Drives
  • Renewable Energy Inverters
  • Uninterruptible Power Supplies (UPS)
  • Switch Mode Power Supplies (SMPS)
  • Inductive Heating and Welding Equipment

Technical Specifications

  • Collector-Emitter Voltage (Vce): 600V
  • Continuous Collector Current (Ic): 20A
  • Pulsed Collector Current (Icm): 40A
  • Power Dissipation (Pd): 167W
  • Operating Junction Temperature Range: -55°C to +150°C

ON Semiconductor's NGB8206NG IGBT provides a high-performance solution for power switching applications, offering a combination of high current handling, low saturation voltage, and fast switching speeds, all of which contribute to increased efficiency and reliability in your electronic designs.

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