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NCP5109BDR2G

Part No NCP5109BDR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 200 V
Rise / Fall Time (Typ) 85ns, 35ns
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCP5109
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 647630-NCP5109BDR2G
Ultra Librarian 3D Model Ultra Librarian NCP5109BDR2G CAD Model

Description

ON Semiconductor NCP5109BDR2G High Voltage Gate Driver

The NCP5109BDR2G by ON Semiconductor is a high-performance, high-voltage gate driver specifically designed to meet the stringent requirements of modern power conversion applications. This device is capable of efficiently driving a pair of power MOSFETs or IGBTs in a half-bridge configuration, making it an ideal choice for a wide range of high-efficiency applications, such as switch-mode power supplies, motor controllers, and inverter systems.

Featuring a high-voltage level shift circuit, the NCP5109BDR2G can operate with an offset voltage of up to 600V, ensuring reliable performance even under extreme conditions. The driver delivers powerful gate drive capability with peak source and sink current ratings of ±2A, enabling fast switching speeds for power semiconductors, which helps in reducing switching losses and improving overall system efficiency.

The device incorporates a range of protective features to ensure the longevity and reliability of the application. These include an undervoltage lockout (UVLO) function for both the high-side and low-side drivers, which prevents the device from operating when the input voltage is insufficient, thus protecting the power switches from potentially damaging conditions.

Furthermore, the NCP5109BDR2G offers a bootstrap operation mode, which is essential for high-side gate drive supply. This feature allows for the creation of a floating supply for the high-side driver, thus simplifying the drive circuitry for half-bridge configurations. The driver is also designed with cross-conduction prevention logic, which reduces the risk of shoot-through by ensuring that both the high-side and low-side switches are not turned on simultaneously.

Available in a compact SOIC-8 package, the NCP5109BDR2G integrates seamlessly into space-constrained applications, offering a reduction in board space without compromising on performance. Its robust design and integrated features make it an excellent choice for designers looking to enhance the performance and reliability of their power conversion systems.

With its combination of high-voltage capability, robust gate drive, and protective features, the NCP5109BDR2G from ON Semiconductor stands out as a superior gate driver solution for advanced power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8886 $57.7590
155+ $0.7291 $113.0105
240+ $0.7064 $169.5360
330+ $0.6835 $225.5550
425+ $0.6608 $280.8400
570+ $0.5925 $337.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,600 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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