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MBRD1035CTLT4G

Part No MBRD1035CTLT4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description Rectifier Diode Schottky Si 35V 10A 3-Pin(2+Tab) DPAK T/R / DIODE ARRAY SCHOTTKY 35V 5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 35V
Current - Average Rectified (Io) (per Diode) 5A
Voltage - Forward (Vf) (Max) @ If 470mV @ 5A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 2mA @ 35V
Operating Temperature - Junction -55°C to 150°C
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 022418-MBRD1035CTLT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Automotive, Industrial
Family Name MBRD1035CTL
Introduction Date January 15, 1998
ECCN EAR99
Country of Origin China, Malaysia, Vietnam, United States of America
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MBRD1035CTLT4G CAD Model

Description

ON Semiconductor MBRD1035CTLT4G Schottky Barrier Rectifier

The ON Semiconductor MBRD1035CTLT4G is a high-performance Schottky Barrier Rectifier designed for applications requiring low voltage drop and high efficiency. This rectifier is a perfect choice for power supply designs, where it can be used in converters, free-wheeling diodes, or polarity protection applications. Its robust design and reliability make it suitable for a wide range of industrial, automotive, and consumer electronics.

Key Features

  • Low Forward Voltage Drop: The device provides a low forward voltage drop, which results in lower power losses and improved efficiency, making it ideal for high-frequency applications.
  • High Surge Capacity: With its excellent surge handling capability, the MBRD1035CTLT4G can withstand high current spikes, ensuring a longer operational life and reliability under stressful conditions.
  • Dual Diode Configuration: The device features a common cathode dual diode configuration, which simplifies the design and reduces component count in applications requiring two diodes.
  • Power Dissipation: It has a power dissipation of 1.25W, which allows for adequate heat management and stable performance in a variety of applications.
  • High Junction Temperature: The operating junction temperature range of -55°C to 150°C allows for use in extreme environmental conditions.

Applications

  • Switching power supplies
  • DC-DC converters
  • Free-wheeling diodes
  • OR-ing diode
  • Reverse battery protection

Package and Quality Assurance

The MBRD1035CTLT4G comes in a DPAK (TO-252) package, which is known for its compact size and ability to handle high thermal performance. This package is suitable for automated assembly processes and helps in achieving a high-density board design. ON Semiconductor is committed to high standards of quality and reliability, and this product is no exception. It is designed to meet the rigorous demands of the industrial and automotive markets, providing a dependable solution for your rectification needs.

With its combination of efficiency, durability, and compact design, the MBRD1035CTLT4G Schottky Barrier Rectifier from ON Semiconductor is an excellent choice for designers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6439 $51.5120
190+ $0.5283 $100.3770
295+ $0.5118 $150.9810
405+ $0.4953 $200.5965
525+ $0.4788 $251.3700
700+ $0.4293 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,500 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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