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FQI7N80TU

Part No FQI7N80TU
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 800V 6.6A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 6.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1850pF at 25V
Power Dissipation (Maximum) 3.13W, 167W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK (TO-262)
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 730954-FQI7N80TU
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI7N80TU CAD Model

Description

ON Semiconductor FQI7N80TU MOSFET

The ON Semiconductor FQI7N80TU is a high-performance N-channel QFET® MOSFET that provides cutting-edge technology designed for a variety of applications, including power management and switching. This component is well-suited for those seeking efficient power conversion with minimal losses, making it an ideal choice for high-efficiency power supplies, converters, and inverters.

With a voltage rating of 800V, the FQI7N80TU is capable of handling high surge voltages, which is critical for systems that are exposed to unpredictable conditions or require a robust design. The device's low on-state resistance (RDS(on)) ensures that power losses are kept to a minimum during operation, which not only improves efficiency but also helps in reducing heat generation and extending the life of the product.

The FQI7N80TU MOSFET also features a fast switching speed, which is essential for applications that demand quick response times. This characteristic is particularly beneficial in Pulse Width Modulation (PWM) circuits and other applications where fast switching can lead to improved performance and reduced electromagnetic interference (EMI).

ON Semiconductor has designed the FQI7N80TU with reliability in mind. It is equipped with a ruggedized package that is engineered to withstand harsh environments and ensure a long operational lifespan. The device also includes inherent protection features such as a built-in gate-source Zener diode, which provides protection against over-voltage, enhancing the overall durability and reliability of the component.

For ease of integration, the FQI7N80TU comes in a TO-262 package, which is widely used in the industry and is compatible with standard mounting and soldering techniques. This makes the MOSFET a versatile choice for designers looking to implement it into a wide range of electronic systems without the need for specialized equipment or processes.

In summary, the ON Semiconductor FQI7N80TU MOSFET is a high-quality, reliable component that offers a combination of high voltage capability, low power losses, fast switching, and a rugged design. It is an excellent choice for engineers and designers who require a robust, efficient, and versatile power management solution for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,400 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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