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Same model may have multiple batches, images only for reference.
IXFX80N50P Real Image
Same model may have multiple batches, images only for reference.

IXFX80N50P

Part No IXFX80N50P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHV HiPerFET Power MOSFET | MOSFET N-CH 500V 80A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 65mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 197nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 12700pF at 25V
Power Dissipation (Maximum) 1040W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191158-IXFX80N50P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX80N50P CAD Model

Description

The IXFX80N50P is a MOSFET transistor manufactured by IXYS.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Continuous Drain Current: 80A
  • Input Capacitance: 12700pF @ 25V
  • Package: PLUS247-3
  • Power Dissipation: 1040W
  • Supply and Demand Status: Limited
  • Estimated Production Lead Time: 19 weeks
  • Applications: Automotive, industrial, and commercial

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42+ $2.7567 $115.7814
65+ $2.6705 $173.5825
90+ $2.5844 $232.5960
116+ $2.4982 $289.7912
155+ $2.2398 $347.1690
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