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FDS4435

Part No FDS4435
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R / P-Channel Logic Level PowerTrenchTM MOSFET | MOSFET P-CH 30V 8.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 20mOhm at 8.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 5V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1604pF at 15V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package 8-SOIC
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173897-FDS4435
Manufacturer Homepage www.fairchildsemi.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics
Family Name FDS4435
Introduction Date October 08, 1999
ECCN EAR99
Country of Origin China, Malaysia, Philippines, Taiwan, Thailand
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FDS4435 CAD Model

Description

Introducing the FDS4435 P-Channel PowerTrench® MOSFET by ON Semiconductor

The FDS4435 is a high-performance, P-Channel PowerTrench® MOSFET crafted by the innovative minds at ON Semiconductor. This state-of-the-art component is designed to deliver efficient power management and conversion for a wide range of electronic applications. With its compact footprint and robust capabilities, the FDS4435 is an ideal choice for engineers looking to enhance their designs with a reliable and powerful MOSFET solution.

Key Features and Benefits

  • Low Gate Charge (Qg): The FDS4435 boasts a low gate charge, which leads to reduced switching losses. This feature allows for faster switching speeds and improved overall efficiency in power conversion applications.
  • High Performance: With a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of -11A, this MOSFET is capable of handling significant power levels, making it suitable for a variety of demanding applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology is engineered to optimize the device's on-resistance (Rds(on)) and minimize losses, providing an efficient power delivery system.
  • Thermal Management: The FDS4435 is designed with excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.
  • RoHS Compliant: In line with modern environmental standards, the FDS4435 is RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances.

Applications

The versatility of the FDS4435 allows it to be used across a broad spectrum of applications. It is particularly well-suited for:

  • Power supply load switches
  • Battery management systems
  • DC-DC converters
  • Motor control circuits
  • Portable electronic devices

Quality and Reliability

ON Semiconductor is committed to providing high-quality products, and the FDS4435 is no exception. It is manufactured to meet stringent quality standards, ensuring reliable performance and longevity in your electronic projects. Whether for industrial, commercial, or consumer applications, the FDS4435 from ON Semiconductor is a superior choice for designers seeking a high-efficiency, P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.0902 $50.0610
1,355+ $0.0740 $100.2700
2,095+ $0.0717 $150.2115
2,885+ $0.0694 $200.2190
3,730+ $0.0671 $250.2830
4,995+ $0.0601 $300.1995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,850 pieces
MOQ: 555 pcs
Order Increment : 1 pcs
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