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FGL12040WD

Part No FGL12040WD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 1200V 80A TO264-3 / IGBT Trench Field Stop 1200 V 80 A 391 W Through Hole TO-264-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Power - Max 391 W
Switching Energy 4.1mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 226 nC
Td (on/off) @ 25°C 45ns/560ns
Test Condition 600V, 40A, 23Ohm, 15V
Reverse Recovery Time (trr) 71 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Supplier Device Package TO-264-3
Base Product Number FGL12040
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FGL12040WDOS,FGL12040WD-ND
Standard Package 375
Win Source Part Number 1221315-FGL12040WD
Ultra Librarian 3D Model Ultra Librarian FGL12040WD CAD Model

Description

The ON Semiconductor FGL12040WD is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for a range of power electronics applications. This high-performance IGBT combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. The FGL12040WD is ideal for use in inverter and power conversion systems for renewable energy, motor drives, and other applications demanding high efficiency and fast switching.

Key Features

  • High Current Capability: The FGL12040WD is capable of handling continuous currents up to 120A, making it suitable for high-power applications.
  • Low Saturation Voltage: This IGBT has a low collector-emitter saturation voltage (VCE(sat)), which reduces power dissipation and improves efficiency.
  • Fast Switching Speed: Fast switching times reduce transition losses and enhance performance in high-frequency operations.
  • Robustness: The device is designed to be rugged and reliable, withstanding harsh operating conditions and ensuring a long operational life.
  • Co-Packaged Diode: Comes with an anti-parallel diode integrated into the package, simplifying circuit design and reducing component count.

Electrical Specifications

  • Collector-Emitter Voltage (VCE): Rated at 400V, providing a wide safety margin for various applications.
  • Gate-Emitter Threshold Voltage (VGE(th)): Ensures low voltage operation and easy control.
  • Maximum Operating Temperature: Capable of operating at temperatures up to 150°C, ensuring stability and reliability in high-temperature environments.

Applications

The FGL12040WD IGBT from ON Semiconductor is versatile and can be used in a variety of applications, including:

  • Renewable energy systems such as solar inverters and wind turbine power converters
  • Industrial motor drives and controls
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) charging stations
  • High-frequency welding machines

By integrating the FGL12040WD into your design, you can expect an optimal balance between performance and reliability, ensuring efficient operation and longevity of your power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.1612 $65.2896
18+ $6.6967 $120.5406
27+ $6.4865 $175.1355
37+ $6.2774 $232.2638
48+ $6.0684 $291.2832
64+ $5.4412 $348.2368
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Availability: 13,463 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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