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IRG4BC20UD

Part No IRG4BC20UD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) | IGBT 600V 13A 60W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 13A
Current - Collector Pulsed (Icm) 52A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 6.5A
Maximum Power 60W
Switching Energy 160μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 27nC
Td (on/off) at 25°C 39ns/93ns
Test Condition 480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188229-IRG4BC20UD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC20UD CAD Model

Description

The IRG4BC20UD is a TO-220AB packaged IGBT transistor manufactured by Infineon Technologies. The supply and demand status of this transistor is currently balanced. The IRG4BC20UD is manufactured by Infineon Technologies.

  • Package: TO-220AB
  • Maximum Collector Current (Ic): 13A
  • Maximum Collector Emitter Breakdown Voltage: 600V
  • Vce(on): 2.1V @ 15V and 6.5A
  • trr: 37ns
  • Gate Charge: 27nC
  • Switching Energy (on): 160μJ
  • Switching Energy (off): 130μJ
  • Maximum Power: 60W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9500 $58.5000
65+ $1.6000 $104.0000
100+ $1.5500 $155.0000
135+ $1.5000 $202.5000
175+ $1.4500 $253.7500
235+ $1.3000 $305.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,786 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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