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Same model may have multiple batches, images only for reference.
IRG7PH42UDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH42UDPBF

Part No IRG7PH42UDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 1200V 85A 320W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 85A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 30A
Maximum Power 320W
Switching Energy 2.11mJ (on), 1.18mJ (off)
Input Type Standard
Gate Charge 157nC
Td (on/off) at 25°C 25ns/229ns
Test Condition 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 153ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188328-IRG7PH42UDPBF
Manufacturer Homepage www.irf.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PH42UDPBF CAD Model

Description

It is an IGBT type trench transistor with a maximum collector current of 85A and a maximum collector-emitter breakdown voltage of 1200V.

  • Transistor Type: IGBT Trench
  • Maximum Collector Current: 85A
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Package: TO-247AC
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Limited

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42+ $2.7593 $115.8906
65+ $2.6727 $173.7255
90+ $2.5860 $232.7400
116+ $2.5006 $290.0696
155+ $2.2419 $347.4945
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