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IXGH32N60AU1

Name: IXGH32N60AU1
Brand: IXYS
SKU: 608497
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXGH32N60AU1
Manufacturer	IXYS
Catalog	IGBTs - Single
Description	HiPerFAST IGBT with Diode Combi Pack
Datasheet	IXGH32N60AU1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Series	HiPerFAST
Packaging	Bulk
Part Status	Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum)	600V
Current - Collector (Ic) (Maximum)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Maximum) @ Vge, Ic	2.9V @ 15V, 32A
Power - Max	200W
Switching Energy	1.8mJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	25ns/120ns
Test Condition	480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr)	50ns
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Package	TO-247-3
Manufacturer Package	TO-247AD (IXGH)
Win Source Part Number	1191185-IXGH32N60AU1
Manufacturer Homepage	www.ixys.com
Family Name	IXGH32N60AU1
Introduction Date	May 29, 1996
ECCN	EAR99
Estimated EOL Date	Obsolete
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Power Management, Alternative Energy
Ultra Librarian 3D Model	Ultra Librarian IXGH32N60AU1 CAD Model

Description

The IXGH32N60AU1 by IXYS is a HiPerFAST series power transistor that has a maximum power rating of 200W and a collector current of 60A.

Manufacturer: IXYS
Series: HiPerFAST
Maximum Power Rating: 200W
Collector Current: 60A
Voltage Breakdown: 600V
Reverse Recovery Time: 50ns
Package: TO-247-3
Mounting: Through-hole
Gate Charge: 125nC
Switching Energy: 1.8mJ (off)
Status: Obsolete
Application: Power management and alternative energy

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