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STGB12NB60KDT4

Part No STGB12NB60KDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT | IGBT 600V 30A 125W D2PAK
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Cut Tape (CT)
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.8V at 15V, 12A
Maximum Power 125W
Switching Energy 258μJ (off)
Input Type Standard
Gate Charge 54nC
Td (on/off) at 25°C 25ns/96ns
Test Condition 480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 80ns
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number STG*12NB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261004-STGB12NB60KDT4
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGB12NB60KDT4 CAD Model

Description

STGB12NB60KDT4 - STMicroelectronics IGBT

The STGB12NB60KDT4 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to offer a high level of performance in power switching applications. It is particularly suitable for use in motor drive, power supply, and inverter systems where efficiency and reliability are critical.

Key Features

  • High Voltage Capability: The STGB12NB60KDT4 is capable of handling up to 600V, making it suitable for a wide range of high voltage applications.
  • Low On-Voltage Drop (VCE(sat)): The device has a low on-state voltage drop, which results in lower power dissipation and improved efficiency.
  • High-Speed Switching: With fast switching speeds, the IGBT is designed to reduce switching losses, which is beneficial for high-frequency operations.
  • Co-Packaged with Free Wheeling Diode: The IGBT comes with an integrated free-wheeling diode, providing additional circuit protection and simplifying design.
  • High Current Rating: This IGBT can handle a significant amount of current, making it suitable for applications requiring high power levels.
  • Low Gate Charge: The low gate charge ensures that the device can be driven with lower power and less complex drive circuits.

Applications

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction Circuits
  • Induction Heating
  • Welding Equipment

The STGB12NB60KDT4 is housed in a D2PAK package, which provides excellent thermal performance and is suitable for surface mount technology (SMT). The robust design of this IGBT ensures that it can withstand the rigorous conditions of industrial environments, while providing a high level of performance and efficiency. With its combination of features, the STGB12NB60KDT4 is an excellent choice for designers looking to improve the performance and reliability of their power management systems.

Conclusion

STMicroelectronics' STGB12NB60KDT4 IGBT is a powerful semiconductor device that brings together high voltage capability, low on-voltage drop, high-speed switching, and a co-packaged free-wheeling diode. It is designed for a variety of demanding applications and is a testament to STMicroelectronics' commitment to providing advanced electronic components for the power electronics market.

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