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FDMA910PZ

Part No FDMA910PZ
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Single P-Channel PowerTrench® MOSFET | MOSFET P-CH 20V 9.4A MICROFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 9.4A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 20mOhm at 9.4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 4.5V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 2805pF at 10V
Power Dissipation (Maximum) 2.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 6-MicroFET (2x2)
Manufacturer Package 6-VDFN Exposed Pad
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173810-FDMA910PZ
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDMA910PZ CAD Model

Description

ON Semiconductor FDMA910PZ P-Channel PowerTrench® MOSFET

The FDMA910PZ is a high-performance P-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is a critical component in a wide range of electronic applications, offering designers a combination of low on-resistance and minimal gate charge to optimize power efficiency and performance.

Key Features

  • Low On-Resistance: The FDMA910PZ boasts an extremely low on-resistance (R<sub>DS(on)), which reduces conduction losses and improves overall efficiency in electronic circuits.
  • High Power Dissipation: With a power dissipation rating of 2.5W, this MOSFET can handle significant power, making it suitable for high-power applications.
  • Advanced PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing cell density, which translates into lower R<sub>DS(on) and reduced gate charge (Q<sub>g).
  • Low Gate Charge: The reduced gate charge ensures faster switching speeds, which is essential for applications that require high-frequency operation.
  • RoHS Compliant: The device is compliant with the RoHS directive, which means it is free from hazardous substances and suitable for use in environmentally sensitive applications.

Applications

The FDMA910PZ is versatile and can be used in various applications, including:

  • Power management systems
  • Load switches
  • Battery management
  • DC-DC converters
  • Portable devices

Specifications

The FDMA910PZ operates with a drain-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -13A at 25°C. Its threshold voltage (V<sub>GS(th)) ranges from -0.4V to -1.0V, allowing for low-voltage operation. The device is housed in a compact 8-Pin Power 56 package, which is optimized for minimal footprint and easy integration into various circuit designs.

With its robust design and energy-efficient operation, the FDMA910PZ from ON Semiconductor is an excellent choice for engineers looking to enhance the performance and reliability of their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4157 $56.6280
90+ $1.1616 $104.5440
135+ $1.1253 $151.9155
185+ $1.0890 $201.4650
240+ $1.0527 $252.6480
320+ $0.9438 $302.0160
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Availability: 14,436 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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