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FCPF067N65S3

Part No FCPF067N65S3
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 650V 44A TO220F / Telecom / Sever Power Supplies
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 67mOhm at 22A, 10V
Vgs(th) (Maximum) at Id 4.5V at 4.4mA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 3090pF at 400V
Power Dissipation (Maximum) 46W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806727-FCPF067N65S3
Ultra Librarian 3D Model Ultra Librarian FCPF067N65S3 CAD Model

Description

The FCPF067N65S3 is a state-of-the-art power MOSFET from ON Semiconductor, designed to meet the high efficiency and reliability demands of modern power applications. This advanced MOSFET is part of the SuperFET® III family, which is renowned for its performance in high-power switching applications.

This MOSFET utilizes ON Semiconductor's latest superjunction technology, providing a significant reduction in on-resistance (RDS(on)) and a lower gate charge (Qg), leading to superior switching performance. The FCPF067N65S3 is characterized by its 650V drain-to-source voltage (VDSS), making it ideal for high voltage applications.

The device is tailored for high-efficiency solutions, delivering outstanding power density and energy efficiency. It is an excellent choice for a variety of applications, including power supplies, lighting, industrial equipment, and high-performance computing systems. Its robust design also ensures reliability and longevity, even in demanding conditions.

Key features of the FCPF067N65S3 include:

  • 650V Rated Breakdown Voltage (VB)
  • Ultra-Low On-Resistance (RDS(on))
  • Low Total Gate Charge (Qg)
  • Low Effective Output Capacitance (Cosseff)
  • Fast Switching Speed
  • High Avalanche Energy Rated (EAS)

The FCPF067N65S3 also features a robust body diode that provides fast recovery time, which is essential for high-frequency applications. Additionally, it is designed to handle high peak currents without degradation, ensuring a reliable performance over its lifetime.

ON Semiconductor has packaged the FCPF067N65S3 in a TO-220F package, which is widely used in the industry and known for its good thermal and electrical performance. The package is designed to facilitate easy mounting and is compatible with standard PCB layouts.

With its combination of high voltage capability, low on-resistance, fast switching, and energy efficiency, the FCPF067N65S3 from ON Semiconductor represents a significant advancement in power MOSFET technology, offering designers a powerful tool to enhance the performance of their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0873 $54.7857
21+ $4.9947 $104.8887
32+ $4.8387 $154.8384
43+ $4.6826 $201.3518
56+ $4.5265 $253.4840
74+ $4.0582 $300.3068
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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