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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer NXP
Win Source Part Number 347633-PHB95N03LT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHB95N03LT CAD Model

Description

The NXP PHB95N03LT is a high-performance, low-threshold N-channel TrenchMOS™ transistor designed to deliver efficient power conversion in a compact form factor. This field-effect transistor (FET) is part of NXP's TrenchMOS portfolio, which is renowned for its state-of-the-art technology that ensures low conduction losses, high switching speeds, and excellent thermal performance.

Key Features

  • Low Threshold Voltage: The PHB95N03LT features a low threshold voltage that allows for efficient operation at lower gate voltages, reducing power consumption and improving overall efficiency.
  • High Continuous Drain Current: With a high continuous drain current rating, this transistor can handle significant power levels, making it suitable for demanding applications.
  • Low On-State Resistance: The low on-state resistance (R<sub>DS(on)) minimizes conduction losses and improves power efficiency, which is crucial for power management applications.
  • Fast Switching Speed: The fast switching capability of the PHB95N03LT ensures minimal switching losses, which is essential for high-frequency power switching applications.
  • Enhanced Thermal Performance: The device's optimized thermal characteristics allow for better heat dissipation, contributing to its reliability and longevity even under high-temperature operating conditions.

Applications

The NXP PHB95N03LT is ideally suited for a wide range of applications that require efficient power management and conversion. These include:

  • DC-to-DC converters
  • Switch-mode power supplies (SMPS)
  • Power management for computer systems
  • Motor drives and controllers
  • Automotive applications and heavy-duty machinery

Product Specifications

The PHB95N03LT boasts impressive specifications that make it a reliable choice for high-performance power applications:

  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 75A
  • Power Dissipation (P<sub>D): 110W
  • On-State Resistance (R<sub>DS(on)): 9.5 mΩ
  • Operating Temperature Range: -55°C to +175°C

With its robust design and advanced TrenchMOS technology, the NXP PHB95N03LT is a perfect choice for engineers looking to improve the efficiency and reliability of their power systems.

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