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BF246B

Part No BF246B
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 25V 625MW TO92 / N-channel silicon junction field-effect transistors
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Bulk
Part Status Obsolete (End Of Life)
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Current - Drain (Idss) at Vds (Vgs=0) 60mA at 15V
Voltage - Cutoff (VGS off) at Id 600mV at 10nA
Power - Max 625mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Part Number Series BF246
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 807129-BF246B
Ultra Librarian 3D Model Ultra Librarian BF246B CAD Model

Description

The ON Semiconductor BF246B is a high-performance N-Channel Junction Field Effect Transistor (JFET) designed for RF amplifier and mixer applications. This device is known for its low noise figure, high gain, and excellent linearity, making it a preferred choice for a wide range of applications in the radio frequency domain.

Key Features

  • Low Noise Figure: The BF246B boasts a low noise figure, which is essential for applications where signal integrity is paramount.
  • High Gain: With its high gain characteristics, this JFET can amplify weak signals without significant loss of quality, ensuring a reliable performance in critical circuits.
  • Good Linearity: The excellent linearity of the BF246B makes it suitable for analog signal processing where distortion needs to be minimized.
  • Versatile VHF/UHF Operation: Designed for VHF and UHF frequencies, the BF246B is versatile and can be used in a variety of RF applications.
  • Low Gate-Source Cutoff Voltage: The device features a low gate-source cutoff voltage, which allows for efficient operation at lower power levels.

Applications

The BF246B is ideal for a range of applications, including:

  • RF amplifiers
  • Mixers
  • Oscillators
  • Low-noise audio amplifiers
  • VHF/UHF receivers

Product Specifications

Parameter Value
Configuration Single
Channel Type N-Channel
Drain-Source Breakdown Voltage 30 V
Gate-Source Cutoff Voltage 0.5 V to 8 V
Forward Transconductance 4.5 mS (minimum)

ON Semiconductor's commitment to quality ensures that the BF246B JFET is a reliable component for designers seeking performance and efficiency in their RF circuit designs. Its low noise, high gain, and linearity make it a solid choice for professional and hobbyist applications alike.

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