The 2SK2394-7-DLP-TB-E from ON Semiconductor is a high-performance N-channel silicon MOSFET designed for a wide range of applications. This power MOSFET is well-suited for high-speed switching applications due to its low on-resistance and high switching speed. It is also characterized by its high breakdown voltage and reliability, making it an excellent choice for power management tasks in both consumer and industrial electronics.
Key Features
- Low On-Resistance: This MOSFET features a very low on-resistance, which translates to reduced power losses during operation and improved overall efficiency.
- High Switching Speed: The device is capable of high-speed switching, which is essential for applications that require fast turn-on and turn-off times.
- High Breakdown Voltage: With a high breakdown voltage, the 2SK2394-7-DLP-TB-E is able to handle higher voltages without succumbing to breakdown, ensuring stable operation under stress.
- Lead-Free and RoHS Compliant: The product is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in a wide range of markets.
Applications
This MOSFET is ideal for a variety of applications, including:
- Power supplies
- DC/DC converters
- Motor drives
- Switching regulators
- LED lighting
- Inverters
Product Specifications
| Parameter |
Value |
| Configuration |
Single |
| Channel Mode |
Enhancement |
| Channel Type |
N-Channel |
| Drain-Source Breakdown Voltage |
60 V |
| Continuous Drain Current |
30 A |
| Power Dissipation |
30 W |
| Operating Temperature Range |
-55°C to +150°C |
With its combination of efficiency, speed, and reliability, the 2SK2394-7-DLP-TB-E from ON Semiconductor is an optimal solution for designers looking to enhance the performance of their power management systems.