2SK1847-TB - ON Semiconductor
The 2SK1847-TB from ON Semiconductor is a high-performance N-Channel MOSFET designed to deliver efficient power management in a wide array of electronic applications. This MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the modern electronics industry.
Key Features:
- Low On-Resistance: The 2SK1847-TB boasts a low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for high-performance power switching applications.
- High-Speed Switching: Engineered for high-speed switching, this MOSFET is well-suited for applications requiring fast switching times, such as power supplies and DC-DC converters.
- High Breakdown Voltage: With a high breakdown voltage, the 2SK1847-TB ensures reliable operation even under high voltage conditions, offering a robust solution for power electronics.
- Gate Charge Optimization: The device features an optimized gate charge that facilitates lower switching losses, contributing to the efficiency of the overall system.
Applications:
The versatile nature of the 2SK1847-TB MOSFET makes it suitable for a variety of applications, including:
- Power Supply Units (PSUs)
- DC-DC Converters
- Motor Drives
- Inverters
- Switching Regulators
- Automotive Electronics
Product Specifications:
| Parameter |
Value |
| Configuration |
Single |
| Channel Mode |
Enhancement |
| Channel Type |
N-Channel |
| Drain-Source Voltage (VDS) |
500V |
| Continuous Drain Current (ID) |
12A |
| Power Dissipation (PD) |
100W |
| RDS(on) |
0.52Ω |
With its combination of high efficiency, reliability, and versatility, the 2SK1847-TB MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance their power management systems.