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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA
Reverse Recovery Time (trr) 5ns
Current - Reverse Leakage @ Vr 2μA @ 25V
Capacitance @ Vr, F 10pF @ 1V, 1MHz
Mounting SMD (SMT)
Case / Package SOD110
Operating Temperature - Junction 125°C (Max)
Win Source Part Number 1022138-BAT254,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Safety
Ultra Librarian 3D Model Ultra Librarian BAT254,115 CAD Model

Description

The BAT254,115 from NXP Semiconductors is a high-performance Schottky barrier diode, designed with precision and reliability in mind. Engineered to cater to a wide array of applications, this component is an essential choice for engineers and designers who require efficient power management and signal rectification in their electronic circuits.

Key Features

  • Low Forward Voltage Drop: The BAT254,115 is characterized by its low forward voltage drop, which enhances overall system efficiency by minimizing power loss during operation.
  • High Surge Current Capability: This diode can withstand high surge currents, making it ideal for applications that experience transient over-voltage conditions, thereby ensuring robust performance and long-term reliability.
  • Fast Switching Speed: With its rapid switching capabilities, the BAT254,115 ensures minimal switching losses and is suitable for high-frequency applications, contributing to efficient circuit operation.
  • Low Capacitance: The diode's low capacitance is advantageous for high-speed switching and applications that demand minimal charge storage, such as RF systems and high-speed logic circuits.

Applications

The BAT254,115 is versatile and can be used in various applications, including:

  • Power supply design
  • DC-DC converters
  • Reverse polarity protection
  • Automotive applications
  • High-frequency rectification
  • Voltage clamping
  • Energy harvesting systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BAT254,115 is no exception. Manufactured with rigorous standards, this component ensures consistent performance and longevity in the most demanding environments. It is RoHS compliant, reflecting NXP's dedication to environmental sustainability and the reduction of hazardous substances in electronic components.

Technical Specifications

The BAT254,115 boasts impressive technical specifications, including a maximum continuous forward current of 200 mA, a peak repetitive reverse voltage of 40 V, and an operating junction temperature range from -65°C to +125°C. These specifications make the BAT254,115 a robust choice for a multitude of electronic designs.

For detailed technical data, application notes, and support, engineers and designers are encouraged to consult the datasheet and technical resources provided by NXP Semiconductors.

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