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BAP1321-03,115

Part No BAP1321-03,115
Manufacturer NXP / Nexperia
Catalog RF Diodes
Description DIODE PIN 60V 100MA SOD-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Diode Type PIN - Single
Voltage - Peak Reverse (Max) 60V
Current - Max 100mA
Capacitance @ Vr, F 0.32pF @ 20V, 1MHz
Resistance @ If, F 1.3 Ohm @ 100mA, 100MHz
Power Dissipation (Max) 500mW
Temperature Range - Operating -65°C to 150°C (TJ)
Case / Package SOD-323
Win Source Part Number 119933-BAP1321-03,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BAP1321-03,115 CAD Model

Description

Product Overview: BAP1321-03,115 by NXP Semiconductors

The BAP1321-03,115 is a high-performance, low-power Radio Frequency (RF) Bipolar Transistor from the renowned manufacturer NXP Semiconductors. This product is designed to meet the rigorous requirements of modern wireless communication systems and is suitable for a variety of applications, including but not limited to RF amplification, oscillation, and mixing in telecommunication devices.

Key Features

  • High Transition Frequency (fT): The BAP1321-03,115 boasts a high transition frequency, enabling efficient operation at microwave frequencies, which is essential for applications in high-speed wireless communication.
  • Low Noise Figure: This transistor is engineered to have a low noise figure, reducing the amount of undesired noise in signal amplification and ensuring clear signal transmission.
  • High Gain-Bandwidth Product: It offers a high gain-bandwidth product, which allows for a wide frequency range of operation while maintaining a high level of gain, making it versatile for various RF applications.
  • Robust Power Handling: The device is capable of handling considerable power levels, making it suitable for high-power applications without compromising performance.

Applications

The BAP1321-03,115 is ideal for use in a range of applications, including:

  • RF amplifiers in mobile and fixed wireless communication.
  • Local Oscillator circuits for frequency synthesis.
  • RF mixers for signal modulation and demodulation.
  • Low-noise amplifiers in receiver chains.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability. The BAP1321-03,115 is manufactured with stringent quality control processes, ensuring high performance and consistency for every unit. Its robust design ensures long-term reliability in a variety of environmental conditions, making it a trusted choice for critical RF applications.

Technical Specifications

Parameter Value
Package Type SOT23
Configuration Single
Transition Frequency (fT) Specified by Manufacturer
Noise Figure Specified by Manufacturer
Power Handling Specified by Manufacturer

For detailed technical specifications, please refer to the official datasheet provided by NXP Semiconductors.

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