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BC817RAZ

Part No BC817RAZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description BC817RA/SOT1268/DFN1412-6 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 350mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1412-6
Base Product Number BC817
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1727-7383-6,BC817RAZ-ND,1727-7383-2,1727-7383-1,934070165147
Standard Package 5,000
Win Source Part Number 961975-BC817RAZ
Ultra Librarian 3D Model Ultra Librarian BC817RAZ CAD Model

Description

The BC817RAZ is a bipolar transistor array with a maximum power of 350mW and a maximum collector-emitter breakdown voltage of 45V.

  • Maximum Collector Current: 500mA
  • DC Current Gain: 160 @ 100mA, 1V
  • Packaging: Tape and reel
  • Operating Temperature: Up to 150°C (TJ)
  • ECCN: EAR99
  • REACH: Unaffected
  • Manufacturer: Nexperia USA Inc.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 40,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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