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Same model may have multiple batches, images only for reference.
APTM100H80FT1G Microsemi Corporation – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

APTM100H80FT1G

Part No APTM100H80FT1G
Manufacturer Microsemi Corporation
Catalog FETs - Arrays
Description MOSFET 4N-CH 1000V 11A SP1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel (Full Bridge)
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 11A
Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
Ultra Librarian 3D Model Ultra Librarian APTM100H80FT1G CAD Model

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