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IRF7389

Part No IRF7389
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET Power MOSFET | MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Rds On (Maximum) at Id, Vgs 29mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 25V
Maximum Power 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187244-IRF7389
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7389 CAD Model

Description

The IRF7389 is a logic level gate N and P-channel MOSFET manufactured by Infineon Technologies.

  • Type: Logic level gate N and P-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current Rating: Not specified
  • Status: Obsolete
  • Application: Power management applications
  • Features: High switching frequency and low on-resistance

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1494 $50.0490
820+ $0.1226 $100.5320
1,265+ $0.1188 $150.2820
1,745+ $0.1149 $200.5005
2,255+ $0.1111 $250.5305
3,015+ $0.0996 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,894 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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