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Same model may have multiple batches, images only for reference.
IRF7304TR Real Image
Same model may have multiple batches, images only for reference.

IRF7304TR

Part No IRF7304TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Generation V Technology | MOSFET 2P-CH 20V 4.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 4.3A
Rds On (Maximum) at Id, Vgs 90mOhm at 2.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 610pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187187-IRF7304TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7304TR CAD Model

Description

The Infineon Technologies 1187187-IRF7304TR is a 2 P-Channel (Dual) transistor with a drain-source breakdown voltage of 20V and continuous drain current of 4.3A.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.3A
  • Features: Logic Level Gate FET
  • Maximum Power: 2W
  • Gate-Source Voltage Threshold: 700mV @ 250μA
  • Gate Charge: 22nC @ 4.5V
  • Input Capacitance: 610pF @ 15V
  • Packaging: Tape and Reel
  • Mounting Style: SMD
  • Status: Obsolete
  • Manufacturer Pack Quantity: 4,000

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28+ $10.7687 $301.5236
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