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Same model may have multiple batches, images only for reference.
APT75M50B2 Real Image
Same model may have multiple batches, images only for reference.

APT75M50B2

Part No APT75M50B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 290nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 75 mOhm @ 37A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX
Package TO-247-3 Variant
Win Source Part Number 1146896-APT75M50B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT75M50B2
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT75M50B2 CAD Model

Description

The Microsemi Corporation 1146896-APT75M50B2 is a MOSFET that can handle a continuous drain current of 75A @ 25°C.

  • Maximum Drain-Source Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Gate Charge @ 10V: 290nC
  • Input Capacitance @ 25V: 11600pF
  • Maximum Power Dissipation @ a case temperature of 25°C: 1040W
  • Package: TO-247-3 variant
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • GPT Description: The MOSFET is widely used in high-power applications due to its high current rating and low on-resistance.

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