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IXTT170N10P

Name: IXTT170N10P
Brand: IXYS
SKU: 1188698
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTT170N10P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 170A TO268 / N-Channel 100 V 170A (Tc) 715W (Tc) Surface Mount TO-268AA
Datasheet	IXTT170N10P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	Polar
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	198 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 25 V
Power Dissipation (Max)	715W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-268AA
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number	IXTT170
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	1188698-IXTT170N10P
Ultra Librarian 3D Model	Ultra Librarian IXTT170N10P CAD Model

Description

The 1188698-IXTT170N10P is a single N-channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 170A.

Channel Type: N-Channel
Drain to Source Voltage: 100V
Continuous Drain Current: 170A
On-Resistance: 9mOhm @ 500mA and 10V
Gate Charge: 198nC @ 10V
Input Capacitance: 6000pF @ 25V
Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

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