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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 900mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4700pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
Win Source Part Number 1191247-IXTH10P50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH10P50 CAD Model

Description

The IXTH10P50 is a P-Channel MOSFET from IXYS.

  • Power Dissipation: 300W
  • Vds - Drain-Source Breakdown Voltage: 500V
  • Rds On (Maximum) at Id, Vgs: 900mOhm @ 5A, 10V
  • Gate charge (Qg) (Maximum) at Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Maximum) at Vds: 4700pF @ 25V
  • Drive voltage (Max Rds On, Min Rds On): 10V
  • Operating temperature range: -55°C ~ 150°C
  • Manufacturer Homepage: www.ixys.com

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.9375 $71.5000
18+ $7.3334 $132.0012
28+ $7.1045 $198.9260
38+ $6.8742 $261.2196
49+ $6.6452 $325.6148
66+ $5.9583 $393.2478
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,500 pieces
MOQ: 8 pcs
Order Increment : 1 piece
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