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Same model may have multiple batches, images only for reference.
IXGM25N100A IXYS
Same model may have multiple batches, images only for reference.

IXGM25N100A

Part No IXGM25N100A
Manufacturer IXYS
Catalog HOT - SALES and EOL Components
Description Low VCE(sat), High speed IGBT | POWER MOSFET TO-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Part Status Last Time Buy
Voltage - Collector Emitter Breakdown (Maximum) 1000V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Maximum) at Vge, Ic 4V at 15V, 25A
Maximum Power 200W
Switching Energy 5mJ (off)
Input Type Standard
Gate Charge 180nC
Td (on/off) at 25°C 100ns/500ns
Test Condition 800V, 25A, 33Ohm, 15V
Reverse Recovery Time (trr) 200ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-204AE
Supplier Device Package TO-204AE
Manufacturer Pack Quantity 20
MSL Level 1 (Unlimited)
Win Source Part Number 65691-IXGM25N100A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXGM25N100A CAD Model

Description

The IXGM25N100A is a high-performance IGBT with a reverse recovery time (trr) of 200ns.

  • Mounting: Through-hole
  • Maximum Collector Current (Ic): 50A
  • Voltage Breakdown (Collector-Emitter): 1000V
  • Gate Charge: 180nC
  • Switching Energy: 5mJ (off)
  • Temperature Range: -55°C to 150°C
  • Maximum Power: 200W
  • Package Type: TO-204AE
  • Manufacturer Package: TO-204AE
  • Category: Discrete Semiconductor Products
  • Status: Last Time Buy
  • Supply and Demand Status: Limited
  • MSL Level: 1 (unlimited)

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