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Same model may have multiple batches, images only for reference.
IXFT36N50P Real Image
Same model may have multiple batches, images only for reference.

IXFT36N50P

Part No IXFT36N50P
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 500V 36A TO-268 D3 / PolarHV HiPerFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 170mOhm at 500mA, 10V
Vgs(th) (Maximum) at Id 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 93nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 5500pF at 25V
Power Dissipation (Maximum) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-268
Manufacturer Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813626-IXFT36N50P
Ultra Librarian 3D Model Ultra Librarian IXFT36N50P CAD Model

Description

The IXYS 813626-IXFT36N50P is an N-channel MOSFET type electronic component that has a drain to source voltage of 500V and can handle a continuous drain current of 36A @ 25°C.

  • Maximum Power Dissipation @ Tc: 540W
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Maximum Gate-Source Voltage: ±30V
  • Temperature Range: -55°C to 150°C
  • Maximum Rds On: 170mOhm @ 500mA, 10V
  • Gate Charge: 93nC @ 10V
  • Input Capacitance: 5500pF @ 25V
  • Gate Threshold Voltage: 5V @ 4mA
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (unlimited)

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Quantity Unit Price Ext. Price
3+ $16.7142 $50.1426
8+ $13.7143 $109.7144
12+ $13.2857 $159.4284
16+ $12.8571 $205.7136
21+ $12.4286 $261.0006
27+ $11.1428 $300.8556
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