The IXFA12N65X2-TRL is a HiPerFET power MOSFET manufactured by IXYS. It's designed for high-frequency, high-efficiency power conversion applications. This MOSFET features a fast intrinsic diode and low gate charge, enabling efficient and reliable operation.

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• DC-DC converters
• Uninterruptible power supplies (UPS)
• Motor drives

Features

• Fast intrinsic diode
• Low gate charge (Qg)
• Avalanche rated
• High power density
• RoHS compliant

Benefits

• Reduced switching losses
• Improved efficiency
• Robust performance
• Compact design
• Environmentally friendly

Additional Details

The IXFA12N65X2-TRL is an N-channel enhancement mode MOSFET. The '12N65' portion of the part number indicates a drain current of 12A and a drain-source voltage of 650V. It features a fast intrinsic diode, which reduces switching losses in hard-switching applications. The low gate charge minimizes drive requirements and improves efficiency. The MOSFET is avalanche rated, providing protection against voltage transients. The device's high power density allows for compact designs.