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BSS806NE H6327

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	BSS806NE H6327
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	BSS806NE H6327 Infineon Technologies MOSFETs N-Ch 20V 2.3A SOT-23-3 datasheet, inventory, & pricing.
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Infineon
Product Category	MOSFETs
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.3 A
Rds On - Drain-Source Resistance	41 mOhms
Vgs - Gate-Source Voltage	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage	550 mV
Qg - Gate Charge	1.7 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW
Channel Mode	Enhancement
Qualification	AEC-Q101
Packaging	Reel
Brand	Infineon Technologies
Configuration	Single
Fall Time	3.7 ns
Forward Transconductance - Min	9 S
Product Type	MOSFETs
Rise Time	9.9 ns
Series	BSS806
Factory Pack Quantity Factory Pack Quantity	3000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	7.5 ns
Part # Aliases	SP000999336 BSS806NEH6327XTSA1
Unit Weight	0.000282 oz
Ultra Librarian 3D Model	Ultra Librarian BSS806NE H6327 CAD Model

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BSS806NE H6327

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