The IRF7835TRPBF is a single N-Channel MOSFET from International Rectifier, optimized for high-frequency synchronous buck converters and other power management applications. This device delivers exceptional efficiency with low on-resistance (RDS(on)) and gate charge (Qg). Its compact package allows for high-density designs, and its thermal performance ensures reliable operation even in demanding conditions.

Applications:

• Synchronous Rectification in DC-DC Converters
• VRM (Voltage Regulator Module) and VRD (Voltage Regulator Down) applications
• High-Frequency Switching Applications
• Power Management in Computing and Telecom Systems
• Point-of-Load (POL) Converters

Features:

• Single N-Channel MOSFET
• Ultra-low RDS(on) for minimal conduction losses
• Low gate charge (Qg) for fast switching speeds
• Optimized for high-frequency applications
• Logic-level gate drive
• RoHS Compliant, containing no Lead

Benefits:

• Increased efficiency in power conversion systems
• Reduced power losses and heat generation
• Improved thermal performance for reliable operation
• Simplified design due to logic-level gate drive
• Higher power density in compact applications

Additional Details:

The IRF7835TRPBF features a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of up to 16A. Its typical RDS(on) is 5.2 mΩ at VGS = 10V. This MOSFET is packaged in a DirectFET™ package, which enhances thermal performance and reduces parasitic inductance. The logic-level gate drive allows for direct interfacing with low-voltage controllers. It is designed for surface mount applications.