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SPB100N03S2L-03

Part No SPB100N03S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8180pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 2.7 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1257794-SPB100N03S2L-03
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name SPB100N03S2L-03
Introduction Date May 09, 2003
ECCN EAR99
Country of Origin Germany
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SPB100N03S2L-03 CAD Model

Description

The Infineon Technologies SPB100N03S2L-03 is a MOSFET transistor with a continuous drain current of 100A (Tc).

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Voltage(th) (Maximum) @ Id: 2V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 8180pF @ 25V
  • Series: OptiMOS
  • Product Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
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Availability: 4,984 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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