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IRFSL7434PBF

Part No IRFSL7434PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO262 / N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 324 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10820 pF @ 25 V
Power Dissipation (Max) 294W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IRFSL7434
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001557628
Standard Package 1,000
Win Source Part Number 1212406-IRFSL7434PBF
Ultra Librarian 3D Model Ultra Librarian IRFSL7434PBF CAD Model

Description

The IRFSL7434PBF is a single N-channel MOSFET from Infineon Technologies, designed for high-frequency applications. This MOSFET features low on-resistance (Rds(on)) and gate charge, making it suitable for efficient power switching and amplification in RF circuits. The device is RoHS compliant and lead-free.

Applications:

  • RF Amplifiers: Used in the final stages of RF power amplifiers for wireless communication systems.
  • High-Frequency Switching Power Supplies: Employed in DC-DC converters and other power supplies operating at high frequencies.
  • Motor Control: Used in high frequency motor control applications.
  • Wireless Charging: Suitable for applications involving resonant wireless power transfer.
  • Class-D Audio Amplifiers: Can be used in efficient Class-D audio amplifier designs.

Features:

  • N-Channel MOSFET: Offers efficient switching characteristics.
  • Low On-Resistance (Rds(on)): Minimizes power losses and improves efficiency.
  • Low Gate Charge (Qg): Reduces switching losses and improves speed.
  • Fast Switching Speed: Enables high-frequency operation.
  • Avalanche Rated: Provides robustness against voltage transients.
  • RoHS Compliant and Lead-Free: Meets environmental regulations.
  • Logic Level Gate Drive: Allows direct drive from logic level signals.

Benefits:

  • High Efficiency: Low on-resistance and gate charge minimize power losses, resulting in increased efficiency.
  • Improved Performance: Fast switching speed enables high-frequency operation and improved transient response.
  • Enhanced Reliability: Avalanche rating provides robustness against voltage transients and improves reliability.
  • Simplified Design: Logic level gate drive simplifies the design and reduces component count.
  • Environmentally Friendly: RoHS compliant and lead-free, meeting environmental regulations.

Additional Details:

The IRFSL7434PBF typically has a drain-source voltage (Vds) rating of 30V, a continuous drain current (Id) rating of up to 24A (depending on the case temperature), and a typical Rds(on) of 3.5 mΩ at Vgs = 10V. It is available in a PQFN 5x6 package for optimal thermal performance and board space utilization. The gate threshold voltage (Vgs(th)) is typically around 1V to 2.5V, allowing for easy driving from logic-level signals. The device is designed for surface mount assembly and is suitable for automated manufacturing processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5029 $60.0696
57+ $2.0536 $117.0552
88+ $1.9901 $175.1288
120+ $1.9254 $231.0480
156+ $1.8619 $290.4564
208+ $1.6690 $347.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 512 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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