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IRF8113TR

Part No IRF8113TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 17.2A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 17.2A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 5.6mOhm at 17.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2910pF at 15V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 710507-IRF8113TR
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF8113TR CAD Model

Description

The Infineon Technologies IRF8113TR is a MOSFET transistor with N-Channel polarity and 8-SO package.

  • Channel Type: N-Channel
  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 17.2A
  • On-State Resistance: 5.6mOhm @ 17.2A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 2.2V @ 250μA
  • Gate Charge: 36nC @ 4.5V
  • Input Capacitance: 2910pF @ 15V
  • Power Dissipation: 2.5W
  • Status: Obsolete
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8696 $60.8720
165+ $0.7136 $117.7440
255+ $0.6913 $176.2815
350+ $0.6690 $234.1500
450+ $0.6467 $291.0150
600+ $0.5798 $347.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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