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IRF7464PBF

Part No IRF7464PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXET Power MOSFET | MOSFET N-CH 200V 1.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 1.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 730mOhm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 280pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,085
MSL Level 1 (Unlimited)
Win Source Part Number 1187290-IRF7464PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7464PBF CAD Model

Description

The Infineon Technologies IRF7464PBF is an obsolete electronic component that belongs to the Discrete Semiconductor Products category.

  • Packaging: Tube
  • Mounting Style: SMD
  • Technology: MOSFET
  • Transistor Polarity: N-Channel
  • Supplier Device Package: 8-SO
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Obsolete
  • Operating Temperature Range: -55°C ~ 150°C
  • Manufacturer Homepage: www.irf.com
  • Manufacturer Package: 8-SOIC
  • Power Dissipation (Maximum): 2
  • Manufacturer Pack Quantity: 4,085
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 1.2A
  • Rds On (Maximum) @ Id, Vgs: 730mOhm @ 720mA, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 5.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
  • Gate Source Voltage (Maximum): ±30V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 280pF @ 25V

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