IRF7331 International Rectifier
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7A
Rds On (Max) @ Id, Vgs 30mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 16V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF733
Standard Package 95 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 746289-IRF7331
Ultra Librarian 3D Model Ultra Librarian IRF7331 CAD Model

Description

The IRF7331 is a dual N-channel MOSFET transistor array from Infineon Technologies.

  • Series: HEXFET®
  • Application: Discrete semiconductor products
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7A
  • Maximum On-Resistance (Rds On): 30mOhm @ 7A and 4.5V
  • Gate Charge (Qg): 20nC @ 4.5V
  • Input Capacitance (Ciss): 1340pF @ 16V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active
  • Gate Type: Logic level
  • Configuration: Dual N-channel

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MOQ: 50 pcs
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