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Same model may have multiple batches, images only for reference.
IPA95R450P7XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA95R450P7XKSA1

Part No IPA95R450P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 950V 14A TO220 / N-Channel 950 V 14A (Tc) 30W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA95R450P7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1053 pF @ 400 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA95R450
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001792306
Standard Package 50
Win Source Part Number 1018865-IPA95R450P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA95R450P7XKSA1 CAD Model

Description

The IPA95R450P7XKSA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ P7
  • Drain to Source Voltage (Vdss): 950 V
  • Continuous Drain Current (Id) @ 25°C: 14A (Tc)
  • Rds On (Max): 450mOhm @ 7.2A, 10V
  • Gate Charge (Qg): 35 nC @ 10 V
  • Input Capacitance (Ciss): 1053 pF @ 400 Vds
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220-3 Full Pack
  • Mounting: Through Hole
  • Power Dissipation: 30W (Tc)
  • ECCN: EAR99 compliant

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