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IRFI630B

Part No IRFI630B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 200V N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1187650-IRFI630B
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI630B CAD Model

Description

The IRFI630B is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor (now ON Semiconductor). It is designed for high-voltage, high-speed power switching applications such as power supplies, motor control, and lighting ballasts. Its robust design ensures reliable performance in demanding environments.

Applications

  • Switch Mode Power Supplies (SMPS).
  • Uninterruptible Power Supplies (UPS).
  • Motor control circuits.
  • High-intensity discharge (HID) lighting ballasts.
  • Electronic ballasts for fluorescent lighting.

Features

  • Voltage Rating: 250V
  • Drain Current (Continuous): 4.3A
  • Drain Current (Pulsed): 17A
  • On-Resistance (RDS(on)): 0.80 Ohms @ VGS = 10V
  • Gate Charge (Qg): 17 nC
  • Avalanche Energy (EAS): 150 mJ
  • Operating Junction and Storage Temperature Range: -55°C to +150°C
  • Package: TO-220 FullPAK
  • Lead-Free

Benefits

  • Efficient power switching due to low on-resistance.
  • High-speed switching capability reduces power losses.
  • Reliable performance under avalanche conditions due to high avalanche energy rating.
  • Excellent thermal performance with the TO-220 FullPAK package allowing for efficient heat dissipation.
  • Wide operating temperature range enables use in various environments.
  • Environmentally friendly due to lead-free construction.

Additional Details

The IRFI630B MOSFET utilizes advanced planar stripe and DMOS technology for high cell density. This results in low on-resistance, minimal conduction losses, and efficient power switching. The TO-220 FullPAK package provides superior thermal performance compared to standard TO-220 packages, enabling higher power dissipation. This MOSFET is commonly used in applications requiring efficient and reliable power switching, such as server power supplies, lighting systems, and industrial motor drives. The device's robust design and high avalanche energy rating ensure reliable operation under transient conditions. The low gate charge facilitates fast switching speeds, reducing switching losses and improving overall system efficiency.

Specifications:

  • Voltage: 250V
  • Current: 4.3A
  • RDS(on): 0.80 Ohms
  • Qg: 17 nC
  • Package: TO-220 FullPAK

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