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Same model may have multiple batches, images only for reference.
AUIRF7379Q International Rectifier
Same model may have multiple batches, images only for reference.

AUIRF7379Q

Part No AUIRF7379Q
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V 5.8A 8SOIC
Datasheet
AUIRF7379Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A
Rds On (Max) @ Id, Vgs 45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Power - Max 2.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number AUIRF7379
Standard Package 95 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567118-AUIRF7379Q
Ultra Librarian 3D Model Ultra Librarian AUIRF7379Q CAD Model

Description

The AUIRF7379Q is a logic level gate N and P-channel MOSFET array designed for general purpose applications.

  • Product Name: AUIRF7379Q
  • Type: logic level gate N and P-channel MOSFET array
  • Application: general purpose applications
  • Drain to Source Voltage: 30V
  • Continuous Drain Current (N-channel): 5.8A
  • Continuous Drain Current (P-channel): 4.3A
  • On-Resistance (N-channel): 45mOhm @ 10V
  • On-Resistance (P-channel): 10mOhm @ 10V
  • Package: 8-SOIC
  • Gate Charge: 25nC
  • Input Capacitance: 520pF
  • Manufacturer: Infineon Technologies
  • Status: obsolete

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135+ $1.2982 $175.2570
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320+ $1.0880 $348.1600
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