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IRF9910PBF Real Image

Same model may have multiple batches, images only for reference.

IRF9910PBF Real Image

Same model may have multiple batches, images only for reference.

IRF9910PBF

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRF9910PBF
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	HEXFET®Power MOSFET \| MOSFET 2N-CH 20V 10A/12A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Transistor Polarity	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	10A, 12A
Rds On (Maximum) at Id, Vgs	13.4mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id	2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds	900pF at 10V
Maximum Power	2W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Manufacturer Package	8-SOIC
Supplier Device Package	8-SO
Family Part Number	IRF9910PBF
Manufacturer Pack Quantity	3,800
MSL Level	1 (Unlimited)
Win Source Part Number	1187463-IRF9910PBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF9910PBF CAD Model

Description

The IRF9910PBF is a dual N-channel power MOSFET designed for use in high voltage, high current applications from Infineon.

Drain-Source Voltage: 20V
Continuous Drain Current: 12A
On-State Resistance: 13.4mOhm
Gate Charge: 11nC
Package: 8-SOIC
Compliance: RoHS

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
22+	$2.3284	$51.2248
53+	$1.9105	$101.2565
82+	$1.8508	$151.7656
112+	$1.7911	$200.6032
145+	$1.7314	$251.0530
194+	$1.5523	$301.1462

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 12,220 pieces

MOQ: 22 pcs

Order Increment : 1 pcs

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