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DMT67M8LSS-13

Part No DMT67M8LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V~60V SO-8 T&R 2 / N-Channel 60 V 12A (Ta) 1.4W (Ta) Surface Mount 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 30 V
Power Dissipation (Max) 1.4W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMT67M8LSS-13TR
Standard Package 2,500
Win Source Part Number 1055823-DMT67M8LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT67M8LSS-13 CAD Model

Description

Introducing the DMT67M8LSS-13 from Diodes Incorporated

The DMT67M8LSS-13 is a cutting-edge, high-performance power MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This product is designed to cater to a wide range of applications, including but not limited to, power management, load switching, and motor control in consumer, industrial, and automotive industries.

Key Features

  • High-Efficiency Power Conversion: The DMT67M8LSS-13 boasts a low on-resistance (RDS(on)) that ensures efficient power conversion, which is crucial for minimizing energy loss and heat generation in electronic circuits.
  • Advanced Packaging: Encased in a robust SOT-23 package, this MOSFET provides a compact footprint while allowing for excellent thermal performance and reliability.
  • High Continuous Drain Current: With the capability to handle a high continuous drain current (ID), this MOSFET can support demanding power requirements, making it suitable for high-power applications.
  • Low Threshold Voltage: A low threshold voltage (VGS(th)) enables the MOSFET to be easily driven at lower gate voltages, enhancing its compatibility with logic-level devices and low-voltage control circuits.
  • Fast Switching Speed: The device is engineered for fast switching, reducing transition losses and improving overall efficiency in high-frequency applications.

Applications

The versatility of the DMT67M8LSS-13 allows it to be integrated into a variety of electronic systems. Its robust performance characteristics make it particularly well-suited for:

  • DC/DC Converters
  • Power Supply Circuits
  • Battery Management Systems
  • Motor Drives and Controllers
  • Load Switching Applications
  • Automotive Electronics

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMT67M8LSS-13 is no exception, having undergone rigorous testing to ensure it performs under the most demanding conditions. Customers can trust this MOSFET to deliver consistent performance and longevity in their electronic designs.

For detailed specifications, application notes, and additional resources, please refer to the official Diodes Incorporated website or contact their customer support team for personalized assistance.

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