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DMN62D4LFB-7B

Part No DMN62D4LFB-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V~60V X2-DFN1006  /  N-Channel 60 V 407mA (Ta) 500mW Surface Mount X1-DFN1006-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 407mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 30 V
Power Dissipation (Max) 500mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package X1-DFN1006-3
Package / Case 3-UFDFN
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMN62D4LFB-7BTR
Standard Package 10,000
Win Source Part Number 1055776-DMN62D4LFB-7B
Ultra Librarian 3D Model Ultra Librarian DMN62D4LFB-7B CAD Model

Description

Product Overview: DMN62D4LFB-7B - Diodes Incorporated

The DMN62D4LFB-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) from the reputable manufacturer Diodes Incorporated. This MOSFET is designed to deliver efficiency and reliability for a wide range of applications. It is housed in a compact, surface-mount DFN1006-3 package, making it suitable for space-constrained applications.

Key Features

  • Low On-Resistance: The DMN62D4LFB-7B offers a very low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved energy efficiency in operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed circuitry, enhancing overall performance in applications like power management.
  • Low Threshold Voltage: The low gate threshold voltage ensures that the device can be driven at lower voltages, making it compatible with low-voltage logic circuits.
  • Lead-Free and RoHS Compliant: The DMN62D4LFB-7B is environmentally friendly, complying with the Restriction of Hazardous Substances (RoHS) directive, ensuring minimal environmental impact.
  • High Power and Current Handling: This MOSFET can handle a continuous drain current (I<sub>D) and has a power dissipation capacity that suits various power applications.

Applications

The DMN62D4LFB-7B is versatile and can be used in numerous electronic applications. Its typical uses include:

  • Power management circuits
  • DC/DC converters
  • Battery-powered devices
  • Load/switch applications
  • Motor control systems
  • Portable electronics

Reliability and Quality

Diodes Incorporated is known for its commitment to quality, and the DMN62D4LFB-7B is no exception. It is built with high standards, ensuring that it performs reliably over its lifetime. The device is also characterized by its thermal stability, providing consistent performance even under varying temperature conditions.

In summary, the DMN62D4LFB-7B from Diodes Incorporated is a robust and efficient solution for designers looking to optimize their electronic designs with a high-quality N-Channel MOSFET. Its low on-resistance, high-speed switching, and compliance with environmental standards make it a smart choice for forward-thinking electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
805+ $0.0622 $50.0710
1,960+ $0.0511 $100.1560
3,035+ $0.0495 $150.2325
4,180+ $0.0479 $200.2220
5,400+ $0.0463 $250.0200
7,230+ $0.0415 $300.0450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 154,526 pieces
MOQ: 805 pcs
Order Increment : 1 pcs
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