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DMN31D5UFO-7B

Part No DMN31D5UFO-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V~30V X2-DFN0604 / N-Channel 30 V 410mA (Ta) 380mW (Ta) Surface Mount X2-DFN0604-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.38 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 22.6 pF @ 15 V
Power Dissipation (Max) 380mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package X2-DFN0604-3
Package / Case 3-XFDFN
ECCN EAR99
HTSUS 8541.21.0095
Other Names 31-DMN31D5UFO-7BTR
Standard Package 10,000
Win Source Part Number 1055768-DMN31D5UFO-7B
Ultra Librarian 3D Model Ultra Librarian DMN31D5UFO-7B CAD Model

Description

Introducing the DMN31D5UFO-7B MOSFET from Diodes Incorporated

The DMN31D5UFO-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal components. This MOSFET is engineered to provide efficient power management and is suitable for a wide range of applications, including load switch, power management, and various switching applications.

Key Features of DMN31D5UFO-7B

  • Low On-Resistance: The DMN31D5UFO-7B boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed circuitry, ensuring minimal delay and high performance in critical applications.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage, making it suitable for low voltage applications and facilitating easy drive from logic level circuits.
  • Surface Mount Package: The DMN31D5UFO-7B comes in an ultra-small DFN2020 package, which is designed for space-saving on PCBs and is suitable for compact electronic assemblies.
  • Power Dissipation: It has a power dissipation of 1.25W, which ensures that the device can handle significant power without compromising its operational integrity.
  • RoHS Compliant: In line with environmental standards, the DMN31D5UFO-7B is RoHS compliant, meaning it is free from hazardous substances, making it a safe choice for electronic manufacturers.

Applications

The DMN31D5UFO-7B is versatile and can be utilized in a variety of applications, including:

  • Power management in portable devices
  • DC/DC converters
  • Battery-powered systems
  • Load switch circuits
  • Switching regulators
  • Motor control circuits

Diodes Incorporated's commitment to quality ensures that the DMN31D5UFO-7B MOSFET meets the highest standards for reliability and performance. Whether you're designing consumer electronics, automotive systems, or industrial machinery, the DMN31D5UFO-7B is an excellent choice for efficient power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,465+ $0.0395 $57.8675
3,560+ $0.0325 $115.7000
5,515+ $0.0314 $173.1710
7,580+ $0.0305 $231.1900
9,805+ $0.0295 $289.2475
13,160+ $0.0263 $346.1080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,510 pieces
MOQ: 1465 pcs
Order Increment : 1 pcs
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