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SUD70N02-04P

Part No SUD70N02-04P
Manufacturer Vishay
Catalog Electronic Wholesale
Description N-Channel 20-V (D-S) 175 MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1262513-SUD70N02-04P
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD70N02-04P CAD Model

Description

The SUD70N02-04P is an N-Channel MOSFET manufactured by Vishay. It is designed for high-efficiency power switching applications. This MOSFET features a low on-resistance (RDS(on)) and a fast switching speed, making it suitable for demanding power management tasks.

Applications

  • Synchronous rectification in power supplies.
  • DC-DC converters.
  • Motor control applications.
  • Load switching.
  • Battery management systems.

Features

  • N-Channel MOSFET: Provides efficient switching performance.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • Avalanche Rated: Offers robustness against voltage transients.
  • Logic Level Gate Drive: Simplifies driving the MOSFET with logic signals.
  • Halogen-Free: Environmentally friendly.
  • TrenchFET® Power MOSFET: Advanced technology for enhanced performance.

Benefits

  • High Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency in power conversion circuits.
  • Fast Switching: Minimizes switching losses and allows for higher operating frequencies.
  • Robustness: Avalanche rating ensures reliable operation under transient voltage conditions.
  • Simplified Drive: Logic level gate drive enables easy interfacing with microcontrollers and other logic devices.
  • Environmentally Friendly: Halogen-free construction meets environmental standards.

Additional Details

The SUD70N02-04P comes in a PowerPAK® SO-8 package, which offers excellent thermal performance. It is designed to operate at a maximum junction temperature of 175°C. The gate-source voltage is rated at ±20V. It also features ESD protection. The device is compliant with RoHS standards. Its low gate charge (Qg) contributes to faster switching speeds and lower switching losses. This MOSFET is an excellent choice for applications requiring high efficiency and reliable performance.

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