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SQD40031EL_GE3

Part No SQD40031EL_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 100A TO252AA / P-Channel 30 V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD40031
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQD40031EL_GE3CT,SQD40031EL_GE3DKR,SQD40031EL_GE3TR
Standard Package 2,000
Win Source Part Number 970294-SQD40031EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQD40031EL_GE3 CAD Model

Description

The SQD40031EL_GE3 is a P-channel MOSFET transistor designed for use in automotive applications.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current @ 25°C: 100 A
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supplier: Vishay Siliconix
  • Also known as: SQD40031EL_GE3CT, SQD40031EL_GE3DKR, and SQD40031EL_GE3TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6194 $150.6042
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3582 $300.1622
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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