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SIZ260DT-T1-GE3

Part No SIZ260DT-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 80V 8.9A 8PWRPAIR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1203917-SIZ260DT-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- FET, MOSFET Arrays
Series TrenchFET® Gen IV
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 80V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerWDFN
Ultra Librarian 3D Model Ultra Librarian SIZ260DT-T1-GE3 CAD Model

Description

FEATURES
• TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested
• Integrated MOSFET half bridge power stage
• Optimized Qgs/Qgs ratio improves switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2594 $50.3760
100+ $1.0334 $103.3400
150+ $1.0011 $150.1650
210+ $0.9688 $203.4480
270+ $0.9365 $252.8550
360+ $0.8396 $302.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,141 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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