The Vishay Siliconix SIS126DN-T1-GE3 is an N-channel MOSFET transistor with a drain-to-source voltage of 80V and a continuous drain current of 12A (Ta) or 45.1A (Tc).

• Drain-to-Source Voltage: 80V
• Continuous Drain Current: 12A (Ta) or 45.1A (Tc)
• Maximum Rds On: 10.2mOhm @ 10A, 10V
• Maximum Vgs(th): 3.5V @ 250μA
• Package: PowerPAK 1212-8
• Package Standard: Tape and Reel
• Standard Package: 3,000
• Operating Temperature: -55°C to 150°C
• Gate Charge: 32nC @ 10Vgs
• Input Capacitance: 1402pF @ 40Vds
• Maximum Vgs: ±20V
• Series: TrenchFET Gen IV