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SIRA00DP-T1-GE3

Name: SIRA00DP-T1-GE3
Brand: Vishay
SKU: 324122
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIRA00DP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 100A PPAK SO-8
Datasheet	SIRA00DP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.2V @ 250μA
Max Gate Charge	220nC @ 10V
Max Input Capacitance	11700pF @ 15V
Maximum Gate-Source Voltage	+20V, -16V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs	1 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	108643-SIRA00DP-T1-GE3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SIRA00DP-T1-GE3 CAD Model

Description

The SIRA00DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay.

Power Dissipation: 6.25W (Ta) and 104W (Tc)
Drain-Source Breakdown Voltage: 30V
Maximum Continuous Drain Current: 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Low Input Capacitance: 11700pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4076	$56.3040
90+	$1.1549	$103.9410
135+	$1.1188	$151.0380
185+	$1.0828	$200.3180
240+	$1.0467	$251.2080
320+	$0.9384	$300.2880

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 27,249 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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